X

Follow WeChat public number for more information

Click elsewhere on the screen to close this window

Corporate News

Switching Category

News

Mass production technology of 4 inch free-standing GaN substrate! Sino Nitride Semiconductor is the first enterprise to innovate the technology in China.
The number of clicks:  Update time:2018-06-15 14:41:28  【print this page】  【shut down

In February 2018, Dongguan Sino Nitride Semiconductor Co., Ltd (hereinafter referred to as Sino Nitride)’s GaN substrate mass production technology achieved major breakthrough. Sino Nitride, for the first time in China, conducted pilot mass production of 4 inch free-standing GaN substrate (Free-standing GaN Substrate, picture 1), which makes the company a leading enterprise in global GaN substrate industry. 

     1523613934127886.jpg  1523613935155818.jpg

Picture 1: 4 inch free-standing GaN substrate                         Picure 2: free-standing GaN substrate, AFM picture


There are two technical difficulties in mass production of 4 inch free-standing GaN substrate: First, growth technology of large-size GaN single crystal material; second, grinding and polishing technology for large GaN chips. Sino Nitride successfully developed HVPE equipment with proprietary intellectual property rights and obtained 4 inch GaN single crystal material; meanwhile the company overcame the difficulty in grinding and polishing technology for GaN substrate (picture 2) and established a self-owned and complete production line for GaN substrate grinding and polishing. The company has successfully achieved the pilot mass production of 4 inch free-standing GaN substrate; it is anticipated to achieve regular mass production from the end of 2018 (picture 3). Sino Nitride’s breakthrough in mass production technology of 4 inch free-standing GaN substrate has brought China to a strategic high point in the global competition in third generation semiconductor industry; it supports China’s transformation from following to leading in global market. 

1523613935539059.png
                                    Picture 3: Planning for Sino Nitride’s free-standing GaN substrate product in 2018.


Mass production technology of 4 inch free-standing GaN substrate! Sino Nitride Semiconductor is the first enterprise to innovate the technology in China.

The number of clicks:  Update time:2018-06-15 14:41:28  【print this page】  【shut down

In February 2018, Dongguan Sino Nitride Semiconductor Co., Ltd (hereinafter referred to as Sino Nitride)’s GaN substrate mass production technology achieved major breakthrough. Sino Nitride, for the first time in China, conducted pilot mass production of 4 inch free-standing GaN substrate (Free-standing GaN Substrate, picture 1), which makes the company a leading enterprise in global GaN substrate industry. 

     1523613934127886.jpg  1523613935155818.jpg

Picture 1: 4 inch free-standing GaN substrate                         Picure 2: free-standing GaN substrate, AFM picture


There are two technical difficulties in mass production of 4 inch free-standing GaN substrate: First, growth technology of large-size GaN single crystal material; second, grinding and polishing technology for large GaN chips. Sino Nitride successfully developed HVPE equipment with proprietary intellectual property rights and obtained 4 inch GaN single crystal material; meanwhile the company overcame the difficulty in grinding and polishing technology for GaN substrate (picture 2) and established a self-owned and complete production line for GaN substrate grinding and polishing. The company has successfully achieved the pilot mass production of 4 inch free-standing GaN substrate; it is anticipated to achieve regular mass production from the end of 2018 (picture 3). Sino Nitride’s breakthrough in mass production technology of 4 inch free-standing GaN substrate has brought China to a strategic high point in the global competition in third generation semiconductor industry; it supports China’s transformation from following to leading in global market. 

1523613935539059.png
                                    Picture 3: Planning for Sino Nitride’s free-standing GaN substrate product in 2018.


Follow us

WeChat

  • Tel:0769-86739999
  • Sale:0769-86739999-999
  • Fax:0769-86719996
  • E_mail:info@sinonitride.com
  • Address:Science and Technology Industrial Park of Qishi Town, Dongguan City, Guangdong Province, China

Copyright©2018 All right reserved SINO CRYSTAL SEMICO CO.,LTD  ICP Number:粤ICP备18026194号-1

Powered by MetInfo 6.1.3 ©2008-2020  www.metinfo.cn